4” GaAs wafer, 100 µm thick,
Application: RF-IC, Au backside metalization, pitch 1525x2125 µm, street width 30 µm, kerf width (incl. recast) ≤ 17µm

4” Silicon wafer, 120 µm thick,
Application: RF-transistor, 0.6 µm Au backside, pitch 700x500 µm, street width 45 µm, kerf width (incl. recast) ≤ 16µm

4” Silicon wafer, 120 µm thick,  Application: RF-transistor, 0.6 µm Au backside, pitch 2300x3500 µm, street width 48 µm, kerf width (incl. recast) ≤ 19µm